The most common plasma etch configurations are reactive ion etch rie, planar etch pe, inductively coupled plasma etch icp etch, or deep reactive ion etch drie etch. The navy researchers developed a new method for deep reactive ion etching rie in which sic materials are etched onaxis or near onaxis. Deep reactive ion etching is enabled by equipment that can achieve high density of reactive species, and independent control of ion current and ion energy. Reactive ion etching rie of inas, insb, and gasb in either cc12fjo or c2hdh2 discharges has been examined as a function of gas composition, flow rate, pressure, power, and etching time. Deep reactive ion etch deep reactive ion etch is a process where the kinetic energy from a plasma is used to activate a chemical reaction that carries out the etching. Silicon drie systems deep reactive ion etching samco inc. While a standard rie process can be used, they are often inadequate so a couple of. Deep reactive ion etching drie is used to create deep, steep sided features in silicon wafers with aspect ratios etch depthfeature width beyond 10.
Design, fabrication, and characterization of a compact deep reactive ion etching system for mems processing. The collected data allows to optimize an etching process, taking into account compatibility with other materials and required etch rates. Highly manufacturable deep submillimeter etching enabled high aspect ratio complex geometry legolike silicon electronics pdf. The comparison of reactive ion etching and plasma etching in. Deep reactive ion etch drie and silicon direct bonding.
Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. A new concept for spatially divided deep reactive ion. The technique is developed and licensed by robert bosch gmbh 1 and relies on the repeated alternation of isotropic silicon etching and passivation steps to obtain anisotropic pro les. Samco was the first japanese semiconductor process equipment manufacturer to offer drie systems using the bosch process. Reactive ion etching of inas, insb, and gasb in cci2f202 and.
The technique is commonly referred to as the bosch, drie, or dse process, is capable of achieving very deep and narrow trenches in silicon with. While a standard rie process can be used, they are often inadequate so a couple of variations have been developed for specific applications. Push big red button on front of system to cut power. Comparison is often made to anisotropic wet etching because sometimes drie and koh can both be used, and selection has to be reasoned. It was developed for microelectromechanical systems mems, which require these features, but is also used to excavate trenches for highdensity capacitors for dram and more recently for creating through. Malik keble college department of engineering science, university of oxford micro and nanotechnology centre, rutherford appleton laboratory a. In order to achieve feature sizes that cannot be obtained through conventional photolithography, nanobioengineers have reached for advanced manufacturing techniques, everything from xray lithography, deep reactive ion etching, and electronbeam lithography to scanningprobe lithography, twophoton polymerization, pulsed laser deposition, and focused ion beam lithography. This technology is based on multistep deep reactive ion etching technique developed in the 1990s for silicon based mems devices.
Rie uses chemically reactive plasma to remove material deposited on wafers. Finally, we succeeded to etch pyrex glass plate with high aspect ratio 10 as shown in fig. Application of deep reactive ion etching for silicon angular rate sensor. Reactiveion etching rie vs deep reactiveion etching drie. Reactiveion etching rie is an etching technology used in microfabrication. Plasma etching techniques including rie, pe, icp, and drie.
Reactive ion etching rie is a high resolution mechanism for etching materials using reactive gas discharges. Cryogenic deep reactive ion etching of silicon micro and nanostructures manuscript submitted 7. Deep reactive ion etching of pyrex glass using sf6 plasma. The purpose of dry etching is to create an anisotropic etch meaning that the etch is unidirectional. Publishers pdf, also known as version of record includes final page, issue and volume numbers. Deep reactiveion etching drie is a highly anisotropic etch process used to create deep. Deep reactive ion etching drie or deep silicon etching dse is an industry. This process is mainly adjusted by chuck power and it is divided into three steps which are zero bias deposition step, high bias polymer removing step, and low bias silicon etching. Design, fabrication, and characterization of a compact deep reactive. Deep reactive ion etching drie sop may 20 loading a sample and running a recipe 1 if the load lock is under vacuum click on vent and wait approximately 3 minutes for the chamber pressure to come up to atmospheric pressure. Rogue valley microdevices has just added another key capability to our mems fabrication portfolio. An important feature of rie is its ability to achieve etch directionality.
Therefore, the process is also called bosch process. Each of these has an important role to play in sic mems fabrication. Reactive ion etching agency for science, technology and. The primary technology of drie is the bosch process, which was named after the german company robert bosch which filed the original patent. However, existing drie processes for sic are not wellsuited for definition of high aspect ratio features because such simple etch. Full size image to form the high aspect ratio silicon nanostructures, the silicon substrate with nitride nanomasking was etched in an inductively coupled plasma icp deep reactive ion etching. Reactive ion etching with sicl, and bcls of high quality gan films grown by plasma enhanced molecular beam epitaxy is reported. Deep reactive ion etching as a tool for nanostructure. In this article, the deep reactive ion etching of pyrex glass has been examined systematically as a function of pressure, selfbias voltage and stage temperature. Characterization of silicon deep reactive ion etching.
Fua department of engineering, university of cambridge, 9 j. If leak is cooling water green, close valves on the wall behind system. Etch rate optimization in reactive ion etching of epoxy. Introduction photosensitive epoxies have become essential in many mems devices.
Process flow for fabricating silicon nanostructures with a combination of silicon nitride nanospacers and deep reactive ion etching of silicon. Polymerization of fluorocarbons in reactive ion etching plasmas. Rie processes are known for higher pressure operating regimes. Deep reactive ion etching an overview sciencedirect topics. Reactive ion etching rie and deep reactive ion etching. Fully automatic reactive ion etching system samcos rie10nr is a lowcost, highperformance, fully automatic, dry etching system which meets the most demanding process requirements for fluorine chemistries. Deep reactive ion etching drie or deep silicon etching dse is an industryleading technology for creating high aspect ratio features in silicon for mems and nanotechnology applications. Sacrificial structures for deep reactive ion etching of. Reactive ion etching rie and deep reactive ion etching drie can also be considered to be forms of chemical etching as they both employ a chemical reaction between the film material and the gaseous etchant to remove material. The etch rate has been found to be larger with bcls than with sic14 plasma. We specialize in studying etch processes of nonconventional thinfilm materials such as copper, indium tin oxide, metal oxides, asi. Two reactive ion etchants, cf4 and sf6, have been compared in terms of plasma characteristics, silicon oxide etch characteristics, extent of rie damage, and formation of barrier layers on a gaas surface after oxide etch. Simulation of reactive ion etching pattern transfer eric s.
Deep silicon etching for thermopile structures using a. The fabrication of patternable silicon nanotips using deep. Deep reactiveion etching drie is used to produce highaspectratio structures in wafers. In the deposition step, a c4f8 layer is deposited while in the etching step, using ion assisted etching. Chemically assisted ion beam etching caibe is a similar combination process where a chemically active gas jet and a broad inert ion beam have a synergistic effect. Thomson avenue, cambridge cb3 0fa, united kingdom and department of mechanical engineering, school of engineering and physical sciences, heriot watt university, edinburgh eh14 4as, united kingdom. Reactive ion etching rie, also known as plasma etching or dry etching, and its extension deep reactive ion etching drie are processes that combine physical and chemicals effect to remove. Reactive ion etching is an anisotropic processreactive ion etching is an anisotropic process.
Characterization of silicon deep reactive ion etching using the spts rapier. Deep reactive ion etching of pyrex glass has been characterized in sulfur hexafluoride plasma sf6. Deep reactive ion etching drie is a type of reactive ion etching aimed at creating very deep, high aspect ratio structures. Silicon nanotips are generated along the sidewalls formed by the. Reactive ion etching is a further development of reactive ion etching and was originally developed in the early 1990s by robert bosch gmbh. Deep reactive ion etch drie rogue valley microdevices. Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect junghoon yeom, yan wu, john c. The icp source generates a highdensity plasma due to inductive coupling between the rf antenna and plasma. Home singh center for nanotechnology browse by type protocols and reports 30. In this article, we describe more than 100mm deep reactive ion etching rie. Reactive ion etching matching unit automatic process pressure control unit principle of rie etching reactant gas mixture flows into vacuum chamber reactive species generated by rf plasma are adsorbed and diffused over the sample surface anisotropic and selective chemical reactions occur and the reaction products leave surface by.
Previously, deep reactive ion etching drie of low aspect ratio ar. The importance of ion bombardment for the etching rate is evident from the experimental results. The plasma is generated under low pressure by an electromagnetic field. This thesis is devoted to the development of nanofocusing refractive. An anisotropic etch is critical for highfidelity pattern transfer. The rie600wreactive ion etcher is intended for an isotropic etching of materials. It is a highly controllable process that can process a wide variety of materials, including. Deep reactive ion etching as a tool for nanostructure fabrication. A plasma creates ions, and neutral species that are drawn to a biased electrode. With the addition of our spts 200mm pegasus ase drie, we now offer deep reactive ion etch. Deep reactive ion etching as a tool for nanostructure fabrication y. Reactive ion etching is an etching technique used in microfabrication.
Plasma therm 790 rie operating instructions emergency procedures power failure. Deep reactive ion etching drie of high aspect ratio sic. Etching in sf 6 caused a bonding behaviour generally known from hydrophobic hf etched samples, whereas adding o 2 to the feed gas caused the si100 surfaces to become hydrophilic and spontaneous bonding was achieved. Spts technologies has been at the forefront of deep silicon etch technology, since the invention of deep reactive ion etching drie, also known as the bosch process in 1994. The method is based on the timemultiplexed etching which is a modified case of the bosch deep reactive ion etching process. It was found that higher etch rates with lower plasmainduced dc bias can be achieved with sf6 plasma relative to cf4 plasma and that this correlates with higher atomic. Pdf application of deep reactive ion etching for silicon. The sts deep reactive ion etch drie system uses sf6 for etching and c4f8 for passivation or deposition steps.
Etching introduction to microfabrication wiley online. Wafer dicing using dry etching on standard tapes and frames. This process addresses the undesirable side effects of the previous offaxis etching. Modification of si100surfaces by sf6 plasma etching. The effect of plasma pretreatments reactive ion etching in sf 6 and sf 6 o 2 on sisi wafer direct bonding was investigated. Use high pressure to increase ionneutral scattering. A disadvantage of wet etching is the undercutting caused by the isotropy of the etch. Deep reactive ion etching drie is a highly anisotropic etch process used to create deep penetration, steepsided holes and trenches in waferssubstrates, typically with high aspect ratios. Only used for sputtering system not for etchingonly used for sputtering system not for etching. The basis of plasmaassisted etching, the main dry etching technique, is explained and plasma system configurations are described such as reactive ion etching rie. Used for any materials insulating and conductiveused for any materials insulating and conductive. Deep reactive ion etching drie sop may 20 loading a sample and running a recipe 1 if the load lock is under vacuum click on vent and wait approximately 3 minutes for the chamber pressure.
Pdf deep reactive ion etching of fused silica using a. It is a highly controllable process that can process a wide variety of materials, including semiconductors, dielectrics and some metals. Drie provides anisotropic selective silicon etching and is the only way to provide fast, highaspect ratio silicon micromachining with precise feature definition and etch profile control. Reactive ion etching rie is the simplest configuration of dry etching equipment. Reactive ion etching rie etching basics byu cleanroom. Surface contamination and damage from cf 4 and sf 6 reactive. Reactiveion etching is an etching technology used in microfabrication.
Surfaces of sige alloy films after 5 min of reactive ion etching, i. Simulation of reactive ion etching pattern transfer. Formation of silicon nanostructures with a combination of. We used a homemade magnetically enhanced, inductively coupled plasma reactive ion etcher meicprie. Berkeley ee143 f2010 lecture 15 1 reactive ion etching r ie plasma wafers rf.
Maximum achievable aspect ratio in deep reactive ion. Samco provides silicon deep reactive ion etching drie systems for mems device fabrication and tsv viahole etching. It focuses on concepts and topics for etching materials of interest in micromechanics. Formal training is required for all users prior to using the system. Therefore most emphasis has been put on understanding the ion and radical kinetics, while relatively little attention has been paid to plasma polymerization. Studies of the reactive ion etching of silicongermanium alloys. Plasma etching techniques are typically classed by the configuration of the electrodes. The etch profile and surface roughness have also been studied. What links here related changes upload file special pages permanent link page. This chapter concentrates on silicon deep reactive ion etching drie processes, with some basic structures. Rapier deep reactive ion etching system drie standard operating procedure revision. The technique is developed and licensed by robert bosch gmbh 1 and relies on the repeated alternation of isotropic silicon etching.
Reactive ion beam etching ribe uses reactive ions, for example, fluorine or chlorine, but the etching mechanism is dominated by physical bombardment at low pressures. Reactive ion etching rie, also known as plasma etching or dry etching, and its extension deep reactive ion etching drie are processes that combine physical and chemicals effects to remove material. Reactive ion etching is a further development of reactive ion etching and was developed by robert bosch gmbh in the early 1990s. Reactiveion etching article about reactiveion etching by. Deep reactive ion etching drie using the bosch process is an indispensable technique for highaspect ratio structuring in the mems industry. Deep reactive ion etching for bulk micromachining of. Rie is a type of dry etching which has different characteristics than wet etching. Department of engineering, university of cambridge, 9 j. Reactive ion etching, epoxy, photoresist, su8, epoclad, epocore 1. A computerized touch panel provides a userfriendly interface for parameter control and recipe storage. A survey on the reactive ion etching of silicon in. Once complete, open the chamber lid and place your wafer in one of the three numbered wafer holders. Deep reactive ion etching request pdf researchgate. Thomson avenue, cambridge cb3 0fa, united kingdom and department of mechanical engineering, school of engineering and physical sciences, heriot watt university, edinburgh eh14 4as, united kingdom a.
Deep reactiveion etching is a highly anisotropic etch process used to create deep penetration, steepsided holes and trenches in waferssubstrates, typically with high aspect ratios. Reactive ion etcher system torr international, inc. Reactive ion etching rie we are interested in understanding the plasma etching mechanism, which includes plasma phase chemistry, plasmasurface reactions, and surface reactions. Reactive ion etching of sige alloys using hbr citation for published version apa. A new concept for spatially divided deep reactive ion etching with aldbased passivation this article has been downloaded from iopscience. Deep reactive ion etching drie is an extension of reactive ion etching rie to make deep structures with high etch rate. Deep, steepsided holes and trenches can be easily created in the wafers using drie see figure 2. With the addition of our spts 200mm pegasus ase drie, we now offer deep reactive ion etch drie, a technique used in advanced mems device fabrication. Reactive ion etching rie is an etching technology used in microfabrication.
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